sot-323 plastic-encapsulate diodes CESDB5V0AT3 esd protection diode description the CESDB5V0AT3 is designed to protect voltage sensitive components from esd. excellent cl amping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to esd. because of its small size, it is suited for use in cellular phones, mp3 players, digita l cameras and many other portable applications where board s pace is at a premium. features z reverse working (stand-off) voltage: 5.0 v z low leakage z response time is typically < 1 ns z esd rating of class 3 (> 16 kv) p er human body model z iec61000 ? 4 ? 2 level 4 esd protection z this is a pb ? free device maximum ratings @t a =25 parameter symbol limit unit iec61000 ? 4 ? 2(esd) air contact 30 30 kv esd v oltage per human body model per machine model 16 400 kv v total p ower d issipation on fr-5 b oard (note 1) p d 150 mw thermal resistance junction ? to ? ambient r ja 833 / w lead solder temperature ? maximum (10 second duration) t l 260 junction and storage t emperature r ange t j, t stg -55 ~ +150 stresses exceeding m aximum r atings may damage the device. maximum r atings are stress ratings only. functional operation above the r eco mmended. operating c onditions is no t implied. extended exposure to stresses above the r ecommended o perating c ond itions may affect device reliability. 1. fr ? 5 = 1.0 x 0.75 x 0.62 in. sot-323 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
electrical characteristics (t a = 25c unless otherwise noted) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current c max. capacitance @v r =0 and f =1mhz electrical characteristics (t a = 25c unless otherwise noted ) device + device marking v rwm (v) i r ( a) @ v rwm v br (v) @ i t (note 2) i t v c @i pp = 5 a i pp (a) v c (v) @max i pp c (pf) @ v r =0v,f=1mhz max max min max ma v max max typ CESDB5V0AT3 b5a 5.0 1.0 5.8 8 .8 1.0 9 12 5 15 26.5 *other voltages available upon request. 2. v br is measured with a pulse test current i t at an ambient temperature of 25c. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
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